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Details of Grant 

EPSRC Reference: GR/H95761/01
Title: THE GROWTH AND CHARACTERISATION OF EPITAXIAL NBN/INSULATOR HETEROSTRUCTURES AND DEVICES
Principal Investigator: Blamire, Professor M
Other Investigators:
Stobbs, Dr W
Researcher Co-Investigators:
Project Partners:
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 1993 Ends: 30 April 1995 Value (£): 120,394
EPSRC Research Topic Classifications:
Materials Processing
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
We aim to fabricate very high quality NbN-based tunnel junctions, required for a range of applications where Nb-based devices are unsuitable, and to establish a reliable and flexible device fabrication technology. This can only be achieved with a full understanding of the materials issues involved in the sputter deposition of NbN-insulator-NbN structures for subsequent patterning into superconducting tunnel devices. The programme will investigate the growth of a range of insulating materials on NbN with the aim of understanding and controlling the structure and uniformity of insulator layers. This will then be extended to the fabrication of all-nitride metal/insulator multilayers and complex device structures. Such multilayers are of interest as a continuation of recent work on double barrier structures in addition to providing further microstructural information. This is interdisciplinary research in which the highest resolution structural information from transmission electron microscopy and x-ray diffraction, together with electronic information from tunnel device characteristics, will be combined with ultra-high vacuum film growth to provide a coordinated programme of materials development.
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Organisation Website: http://www.cam.ac.uk