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EPSRC Reference: GR/H93774/01
Title: RESONSNTLY-EXCITED RAMAN STUDIES OF WIDE-BANDGAP DILUTE MAGNETIC SEMI-CONDUCTOR HETEROSTRUCTURES
Principal Investigator: Davies, Professor JJ
Other Investigators:
Wolverson, Professor D
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics
Organisation: University of East Anglia
Scheme: Standard Research (Pre-FEC)
Starts: 17 June 1993 Ends: 16 March 1996 Value (£): 77,524
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
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Panel History:  
Summary on Grant Application Form
The incorporation of magnetic ions into semiconductors results in giant enhancement of the magnetic behaviour of the charge carriers. Quantum well structures that include dilute magnetic semiconductors (DMSCs) thus exhibit unusual features (such as barrier height tunability in magnetic fields) that cannot be observed in conventional systems: they are therefore of special interest for the modelling of the electronic properties of confined charge carriers. Further unusual aspects include the effects of reduced dimensionality on magnetic ordering and on magnetic polarons, the behaviour of novel magnetic excitations in structures whose alternating layers are of different magnetic phases and the effects of strain-induced piezoelectric fields on carrier magnetism. This proposal takes advantage of the dramatic enhancement that occurs in Raman scattering intensities in DMSCs when the laser is in resonance with electronic transitions. Specifically, it concerns resonant Raman spectroscopy of magnetic, vibrational and electronic excitations in heterostructures based on wide bandgap DMSCs such as ZnTe/ Zn1-xMnxTe and CdTe/Cd1-yTe(y>0.4) grown by MBE at Hull, thus extending the very successful work already carried out on the cadmium based structures of lower magnetic concentration. Extension of laser tunability to the blue-green region will enable study of the full range of heterostructures to be produced in this coordinated inter-university programme.
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