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Details of Grant 

EPSRC Reference: GR/H64170/01
Title: OPTOELECTRONIC PROPERTIES OF STRAINED LAYER INGAAS/ALGAAS DEVICES
Principal Investigator: Williams, Dr R
Other Investigators:
Researcher Co-Investigators:
Project Partners:
National Research Council of Canada
Department: Physics
Organisation: Imperial College London
Scheme: Standard Research (Pre-FEC)
Starts: 22 October 1992 Ends: 21 October 1995 Value (£): 148,599
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
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Further Information:  
Organisation Website: http://www.imperial.ac.uk