| EPSRC Reference: |
GR/G37972/01 |
| Title: |
SURFACE TOPOGRAPHY EVOLUTION ON ION BOMBARDED SILICON |
| Principal Investigator: |
Carter, Professor G |
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| Department: |
Electronic and Electrical Engineering |
| Organisation: |
University of Salford |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 March 1992 |
Ends: |
30 June 1995 |
Value (£): |
69,430
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Summary on Grant Application Form |
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1) to determine the physical processes responsible for the initiation and evolution of surface topography on ion bombardment sputtered silicon. 2) to determine irradiation conditions necessary to minimise topography evolution in order to optimise depth resolution in depth-composition analysis.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.salford.ac.uk |