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Details of Grant 

EPSRC Reference: GR/A00041/02
Title: AF: QUANTITATIVE STRAIN-MAPPING IN THIN-FILM SYSTEMS BY COMPLEMENTARY ELECTRON MICROSCOPY TECHNIQUES
Principal Investigator: Moebus, Dr G
Other Investigators:
Researcher Co-Investigators:
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Department: Materials Science and Engineering
Organisation: University of Sheffield
Scheme: Advanced Fellowship (Pre-FEC)
Starts: 01 October 2002 Ends: 30 September 2003 Value (£): 39,521
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
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Summary on Grant Application Form
An epitaxial thin film model system, grown by molecular beam epitaxy, shall be characterized quantitatively with respect to the mode, the strain distribution and degree of strain localisation in its 3D-network configuration. Strain sensitive techniques of transmission electron microscopy, like high-resolution electron microscopy (HREM) in its strain mapping variety, and scanning mode of convergent beam electron diffraction will be developed and applied with special respect to the exceptionally high spatial resolution for microdiffration and imaging provided by the new Oxford FEGTEM (JEM3000F). The examinations will start on the Ag/A1 system in various orientations and film widths, extended later to multiplayer systems and to other thin film problems of technological interest such as e.g. diamond/Si.
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Organisation Website: http://www.shef.ac.uk