Details of Grant 

EPSRC Reference:	GR/S94148/01
Title:	Growth of single crystal thin films of transparent conducting oxides by oxygen plasma assisted atomic beam epitaxy
Principal Investigator:	Egdell, Professor RG
Other Investigators:	Hutchison, Dr JL Foord, Professor J Jones, Professor MO Edwards, Professor P Dobson, Professor PJ
Researcher Co-Investigators:
Project Partners:	Sharp Laboratories of Europe Ltd
Department:	Oxford Chemistry
Organisation:	University of Oxford
Scheme:	Standard Research (Pre-FEC)
Starts:	20 June 2005	Ends:	19 June 2008	Value (£):	565,094
EPSRC Research Topic Classifications:	Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:	Panel Date Panel Name Outcome 30 Mar 2004 Joint Photonics Prioritisation Panel March 04 Deferred
Summary on Grant Application Form
The possibilities for exploitation of transparent conducting oxides in advanced electronic and optoelectronic devices demands access to high quality single crystal material which can be reproducibly doped either n-type or p-type. In the present application we propose to establish a facility for the growth of oxide single crystal thin films by oxygen plasma assisted atomic beam epitaxy (OPABE) and to pursue an exploratory programme embracing both established n-type oxides and more challenging p-type materials. The latter aspect of the work will involve both novel chemical strategies for the p-type doping of oxides which are conventionally regarded as intrinsically n-type; and growth of a new generation of ptype oxides mostly based on copper. We will also establish protocols for selectively tuning the value of electronic energy bandgaps by growth of ternary or more complex oxide alloy systems. With the various building blocks in place we will then turn to fabrication of more complex structures including p-n junctions and novel all-oxide light emitting diodes incorporating lanthanide elements. Underpinning the growth effort, the bulk and surface physical properties of the oxide materials will be investigated by transport measurements and a range of structural and spectroscopic techniques (including X-ray and electron diffraction; electron and scanning probe microscopy; Raman and photoluminescence; and photoemission spectroscopy). The experimental programme will involve close collaboration with Sharp Laboratories of Europe and will attempt to integrate oxide optoelectronic materials with the more established nitride materials.
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Further Information:
Organisation Website:	http://www.ox.ac.uk