| EPSRC Reference: |
GR/S74638/01 |
| Title: |
Ion implantation of Sb+ for ultra-shallow n-type layers in silicon: for future generation devices |
| Principal Investigator: |
Emerson, Dr N |
| Other Investigators: |
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| Department: |
Sch of Electronics & Physical Sciences |
| Organisation: |
University of Surrey |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 February 2004 |
Ends: |
31 July 2005 |
Value (£): |
19,594
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Summary on Grant Application Form |
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We will measure the atomic and electrical profiles of low energy, 1-1 OkeV, Sb implanted silicon following annealing, with the aim of determining how to produce highly activated shallow junctions, 10-20nm, with low sheet resistivity, <300ohm/square. Initial results show that low temperature anneals (600700C) may represent the best way to achieve such shallow junctions. It is unclear what fraction of the implanted antimony forms precipitates in the regions where the solid solubility is exceeded. We will provide a quantitative explanation for these parameters and clarify what effect the precipitates have on the magnitude of the carrier mobility. We will form an opinion as to whether the use of antimony ions provides an advantage over the use of arsenic for ultra-shallow junction formation and explain how best to achieve such shallow junctions in the range 10-20run.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.surrey.ac.uk |