EPSRC Reference: |
GR/S56030/01 |
Title: |
Surface & Interface Electronic Structure of Arsenic-Based Dilute III-V Nitrides |
Principal Investigator: |
McConville, Professor CF |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Warwick |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 September 2003 |
Ends: |
31 August 2005 |
Value (£): |
99,979
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EPSRC Research Topic Classifications: |
Condensed Matter Physics |
Materials Characterisation |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
This proposal follows a highly successful feasibility study (GR/R93872/01) in which we established the potential of fundamental surface physics particularly the potential of near-surface electronic structure measurements, to impact the relatively new area of dilute 1114 nitrides. The proposal seeks to extend the experimental and theoretical methodology we have developed whilst studying InNSb to the investigation of the electronic properties of GalnNAs and InNAs alloys for application in long wavelength optoelectronic devices (1.3-1.55 microns and 8-12 microns respectively). High re; electron energy loss spectroscopy (HREELS) and Hall measurements will be used to measure the effects of temperature and differing alloy composition, on the resultant bulk band structure and surface space-charge layers. Calculations of the bulk band structure using both the band crossing model and the modified k.p approximation will be performed in order to interpret the experimental results. Semi-classical dielectric theory simulations of the HREEL spectra and charge profile calculations will be used to quantify the surface space-charge properties. Changes in the bonding configurations in the III-N-As epilayers will be monitored using x-ray photoelectron spectroscopy, enabling both the blue shift in the ph( luminescence signal after annealing in GalnNAs and hydrogen passivation of nitrogen to be explained microscopically. InNAs thin films produced energy nitrogen ion bombardment and annealing of InAs will also be studied using HREELS, XPS, XRD and PL and compared with the epitaxial alloys
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.warwick.ac.uk |