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Details of Grant 

EPSRC Reference: GR/S49407/01
Title: Next Generation GaN-based Materials
Principal Investigator: Dawson, Professor P
Other Investigators:
Godfrey, Dr M
Researcher Co-Investigators:
Project Partners:
Thomas Swan
Department: Physics and Astronomy
Organisation: University of Manchester, The
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 2003 Ends: 30 September 2006 Value (£): 223,953
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/S49391/01
Panel History:  
Summary on Grant Application Form
The proposed research aims to understand the basic science behind the growth of high quality, low dislocation density, GaN based materials, and behind their complex optical properties. We will seek to understand the world record 46% internal quantum efficiency we have recently achieved for InGaN MQWs with 19% In content and extend this high efficiency to other compositions. We will study in detail the localisation of carriers in InGaN, AGaN and InAIGaN MQWs due to quantum well width fluctuations and compositional fluctuations. We propose to use Epitaxial Lateral Overgrowth (ELO) to grow low dislocation density GaN. We will grow GaN on Si using an AIN buffer layer and we will attempt to grow GaN on Si using a magic buffer layer. Our materials will be carefully characterised: structurally, optically and electrically. High resolution EELS will be used for an in-depth study of defect states in the band gap, and electron holography will be used to measure the piezoelectric fields across quantum wells. We will fabricate high efficiency green, blue and UV MQWs. We will develop the techniques of electron holography in a TEM and energy-filtered imaging in an SEM to measure quantitative 2-D dopant distributions in GaN-based structures with high spatial resolution.
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Further Information:  
Organisation Website: http://www.man.ac.uk