| EPSRC Reference: |
GR/S46253/01 |
| Title: |
Design and Fabrication of Magnetoresistive Devices Employing Optimised Iron Oxide Films |
| Principal Investigator: |
Hill, Dr EW |
| Other Investigators: |
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| Department: |
Computer Science |
| Organisation: |
University of Manchester, The |
| Scheme: |
Postdoctoral Mobility PreFEC |
| Starts: |
01 April 2003 |
Ends: |
30 June 2004 |
Value (£): |
66,123
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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This project involves a transfer of the RA from the Chemistry Department to the Centre for Mesoscience and Technology in the Department of Computer Science. This transfer brings knowledge and skills already gained by the RA in the optimisation of fundamental magnetic and magnetoresistive (MR) properties of iron oxide thin film structures to a cross-discipline collaboration focussed on device fabrication. The ultimate aim is to fabricate practical devices and optimise their magnetoresistive properties for use in technologies such as data storage as well as magnetic sensing for application in automotive sensors. We aim to achieve magnetic tunneling junctions (MTJ) with a high room temperature MR and high low field sensitivity so that these devices can be used commercially. This is feasible using high quality iron oxide layers because of their high spin polarisations and high magnetic transition temperatures. Earlier devices employing (100) oriented Fe304 layers have a complicated magnetic structure and have displayed very limited MR values. Our studies will allow the first investigations into devices based on Fe304 (111) layers. They offer a well defined magnetic structure where all the moments are in plane and alternating Fe layers couple antiferromagnetically. The RA has previously optimised the growth conditions for epitaxial Fe304 and alpha-Fe203 films on alpha-A1203(0001) substrates for high crystallographic quality and suitable physical and magnetic properties, such as the conductivity and surface magnetisation at room temperature. These growth conditions will be further refined for optimal device performance. In addition to skills and experience transferred by the RA to the applied discipline, a great added value to the RA's career is expected in terms of significantly improved employability by a move closer to technology.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.man.ac.uk |