| EPSRC Reference: |
GR/S26224/01 |
| Title: |
Realising the potential of silicon carbide |
| Principal Investigator: |
Jones, Professor R |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
06 October 2003 |
Ends: |
05 October 2006 |
Value (£): |
152,942
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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First principles theoretical calculations will be used to elucidate the mechanism for the degradation of bipolar devices in SiC. The electrical activity of dislocations and their kinks will be explored and links made with experiments carried out on degraded diodes. The electrical and optical properties of defects grown-in as well as created by irradiation or implantation will be studied and compared with data obtained at Bristol and elsewhere.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ex.ac.uk |