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Details of Grant 

EPSRC Reference: GR/S16263/01
Title: Arsenic Doped GaN - Quantum Dots and High Electron Mobility Transistors
Principal Investigator: Plaut, Dr A
Other Investigators:
Researcher Co-Investigators:
Project Partners:
LOFFE Physico-Technical Institute Technische Universitat Berlin
Department: Physics
Organisation: University of Exeter
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 2003 Ends: 30 April 2007 Value (£): 159,717
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
In the field of high-voltage, high-power, high-temperature microelectronic devices, AIGaN/GaN high electron mobility transistors (HEMTs) have emerged as particularly attractive candidates due to their wide bandgap and extremely high sheet electron channel density. In addition to increasing the sheet electron density, adding small quantities of As to the GaN holds the promise of a four-fold increase in the mobility of these versatile HEMTs. It is the purpose of this project to test both these postulates.InGaN multiquantum-well-structure violet laser diodes are now commercially available and have been shown to operate continuous-wave for more than 10000 hours at room temperature. There is still much controversy however over whether the luminescence from such conventionally grown InGaN quantum wells derives from carriers confined in quantum dots. Evidence for quantum dots relies so far solely on structural and compositional analysis. This project is therefore extremely timely, since we propose to investigate optically samples in which the compositional modulation has been taken to its extreme by using ultra-thin insertions. By studying samples with such strong composition modulation we hope to be able to resolve any outstanding controversies as to the origin of the luminescence.
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Organisation Website: http://www.ex.ac.uk