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Details of Grant 

EPSRC Reference: GR/R93254/01
Title: Exploring Nanoscale Dynamics of Compound Semiconductor Epitaxy Using Low Energy Electron Microscopy
Principal Investigator: Jesson, Dr D
Other Investigators:
Prior, Dr KA
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Heriot-Watt University
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 2003 Ends: 31 March 2006 Value (£): 279,323
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The aim of this proposal is to establish a novel UK electron microscopy initiative to address fundamental issues in the nanoscale growth dynamics of compound semiconductor materials. The programme is based around a new Centre for Low Energy Electron Microscopy (LEEM) which has recently been funded by the Scottish Higher Education Funding Council. The new LEEM, costing 600K, will be installed at Heriot-Watt University during the spring of 2003 and will be the first instrument of its type in the UK and the only facility world-wide equipped to grow GaAs and InAs.The growth of III-V semiconductors is poorly understood when compared with elemental semicondutors, such as Si, because of the complex growth dynamics associated with As and Ga/In at elevated temperatures. The new microscope will allow us to image the motion of surface steps, strained interface formation, lateral compositional segregation and quantum dot nucleation at video-rate under normal growth conditions. This will represent a major advance in the non-equilibrium thermodynamics of multi-component semiconductor growth and facilitate the development of new strategies for improving device quality and generating nanostructures for applications in quantum information processing.
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Organisation Website: http://www.hw.ac.uk