| EPSRC Reference: |
GR/R88823/01 |
| Title: |
Medium energy ion scattering of surface and near surface structure and composition with atomic resolution |
| Principal Investigator: |
Tear, Professor SP |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of York |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
16 August 2002 |
Ends: |
15 August 2006 |
Value (£): |
295,102
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Surfaces & Interfaces |
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| EPSRC Industrial Sector Classifications: |
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| Related Grants: |
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| Panel History: |
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Summary on Grant Application Form |
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The proposed research is to use MEIS to study the structure of a range of novel metal-semiconductor interface that arise from two proposed approaches to interface formation. (i) The adsorption, growth and surface crystallography of metals and gases onto the surface of 2-dimensional rare earth silicides on silicon(111) using MEIS. The surface of these 2D silicides offers a template of a simple p(1x1) geometry of silicon atoms, with a subsurface layer of rare earth atoms. These high mass subsurface rare earths will be exploited as ion scattering centres for illuminating, from below, th surface atoms. Using this searchlight technique the structure of surface atoms relative to the subsurface rare earths may be determined. Materials to study for growth will include those of technological interest namely, silicon (both solid phase epitaxy and CVD from silane), iron, copper, indium, galliun and silver. In the adsorption studies hydrogen and oxygen will be used. The addition of ERDA to the MEIS facility will be used to identify subsurface hydrogen atomic positions in the hydrogen and silane adsorption studies via blocking features observed in the angular distribution of recoiled hydrogen atoms. (ii) The growth and structure of silicon deposited (by solid phase spitaxy and by CVD from silane) on single crystal metal surfaces will be carriec out, such systems offer the potential of different interface structures to that found with metal on silicon system. This potential difference arises from the differing subtrate lattice onto which the growth is confined. Substrates to study will include iron, palladium, and rare earths single crystals.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.york.ac.uk |