| EPSRC Reference: |
GR/R46465/01 |
| Title: |
Group III-Nitride Heterostructures for Quantum Tunnelling Devices Grown by Molecular Beam Epitaxy |
| Principal Investigator: |
Foxon, Professor CT |
| Other Investigators: |
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| Department: |
Sch of Physics & Astronomy |
| Organisation: |
University of Nottingham |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 January 2002 |
Ends: |
30 June 2005 |
Value (£): |
275,306
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| EPSRC Research Topic Classifications: |
| Condensed Matter Physics |
Materials Characterisation |
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Summary on Grant Application Form |
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We will perform a feasibility study for the MBE growth of quantum transport devices (QTDs) based on the group III-nitiride material system. Initially, we will grow single-barrier p-i-p and n-i-n tunnel devices to allow us to measure band offsets. Then we shall use the acquired information to design and fabricate resonant tunnnelling diodes (RTDs). Further measurements will allow us to optimise the design with the goal of creating a device with a peak to valley current ratio of 3:1 at room temperature. The prospects for the fabrication of more sophisticated OTD will be evaluated.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.nottingham.ac.uk |