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Details of Grant 

EPSRC Reference: GR/R43402/01
Title: Improved Processing of High Mobility Narrow Gap Semiconductors for Sensor Applications
Principal Investigator: Cohen, Professor LF
Other Investigators:
Parry, Professor G
Researcher Co-Investigators:
Project Partners:
Generics Asset Management Ltd NEC Renishaw
Department: Physics
Organisation: Imperial College London
Scheme: Standard Research (Pre-FEC)
Starts: 01 November 2001 Ends: 31 July 2004 Value (£): 219,174
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
EPSRC Industrial Sector Classifications:
Aerospace, Defence and Marine Manufacturing
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Very thin (- 100nm) films of narrow gap semiconductors will be prepared with high carrier mobilities close to the phonon limit at room temperature. Such high mobility matreials have only been previously available in bulk or thick film (- 1 micrometer) form. The new very thin film material will be used to fabricate prototypes of a new class of magnetic sensor based on Extraordinary Magnetoresistance (EMR). These new sensors will find important applications in a number of technologies ranging from read heads in high density magnetic recording to position sensing in automobile engines and disk brakes.
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Further Information:  
Organisation Website: http://www.imperial.ac.uk