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Details of Grant 

EPSRC Reference: GR/R19595/01
Title: Hydrogen In Semiconductor Silicon ... Dynamic Properties of Defects
Principal Investigator: Peaker, Professor AR
Other Investigators:
Newman, Professor R Evans-Freeman, Professor J
Researcher Co-Investigators:
Project Partners:
Department: Electrical Engineering & Electronics
Organisation: UMIST
Scheme: Standard Research (Pre-FEC)
Starts: 01 December 2000 Ends: 30 November 2001 Value (£): 65,361
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
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Panel History:  
Summary on Grant Application Form
It is now well-established that hydrogen is introduced into silicon by many processes used in the semiconductor industry. The work proposed in this fellowship aims to study the effect of hydrogen in single crystal silicon in relation to its role in reacting with impurities and intrinsic defects to form meta-stable or transient species. This is a central issue in understanding the reaction paths of defect pasivation and aspects of hydrogen drift and diffusion. In particular, it is proposed that the role of hydrogen in modifying implant damage is studied via its reaction with vacancies and its ability to modify interstitial clusters. It has been demonstrated that Laplace DL TS is able to reveal small disturbances in the carrier thermal emission process caused by the local environment of the defect. By studying the re-orientation and relaxation of defects under uniaxial stress at various temperatures, it is possible to observe the kinetics of hydrogen motion and loss from specific defects. This gives a unique insight into the binding energies and stability of many of the defects involving hydrogen.
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