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Details of Grant 

EPSRC Reference: GR/R15184/01
Title: Stimulated Emissions and Lasing Processes In Inga(Ai)N Quantum Well Heterostructures
Principal Investigator: Blood, Professor P
Other Investigators:
Smowton, Professor PM
Researcher Co-Investigators:
Project Partners:
Department: School of Physics and Astronomy
Organisation: Cardiff University
Scheme: Standard Research (Pre-FEC)
Starts: 14 March 2001 Ends: 13 August 2004 Value (£): 178,774
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/R15191/01
Panel History:  
Summary on Grant Application Form
This collaboration between Cardiff and Sheffield aims to obtain a comprehensive understanding of the stimulated emission and lasing processes in InGaN-GaN quantum wells. This physics underpins the operation of nitride laser diodes, but its present status lags seriously behind the device technology. We will carry out a systematic programme of complementary studies on custom-designed samples now available from the Central III-V Facility. This is expected to establish a strong UK presence in the competitive field of GaN laser physics, by providing a definitive body of knowledge beyond the capabilities of either group alone.At Cardiff measurements will be made of the single-pass optical gain and spontaneous emission spectra over a wide temperature range and for a variety of structures. These measurements do not require a working laser device. These data will give the fundamental relation between gain and intrinsic recombination current and will be compared with recent many-body calculations. We will examine the validity of the assumption of quasi-equilibrium by comparing gain and emission spectra measured at the same time. This assumption is the fundamental basis of most gain calculations but may not be applicable in the presence of In composition fluctuations. These results will be interpreted in conjunction with dynamical studies at Sheffield. Nitride structures are known to contain high defect concentrations and we will use two different approaches to measure the non-radiaitive recombination rates as functions of temperature to fully characterise these processes. Finally the data will be used to design and make a room temperature diode laser.
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Further Information:  
Organisation Website: http://www.cf.ac.uk