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EPSRC Reference: GR/R10653/01
Title: Investigation of Gallium Doped Zn0 & Zns1-Xsex Window Layers For Application In Culns2-Based Solar Cells
Principal Investigator: Miles, Professor R
Other Investigators:
Forbes, Dr I
Researcher Co-Investigators:
Project Partners:
Department: Sch of Engineering & Technology
Organisation: Northumbria, University of
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 2001 Ends: 30 April 2003 Value (£): 21,198
EPSRC Research Topic Classifications:
Solar Technology
EPSRC Industrial Sector Classifications:
Energy No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Thin films of CulnS2 are produced at Northumbria Photovoltaics Applications Centre, NPAC, by sulphurising rf suppereted Cu/In multilayer precursors. At the Sri Venkateswara University in India Ga-doped ZnO and ZnS1-xSex window layers are produced by Dr. Reddy using spray pyrolysis and by dc magnetron sputtering. This proposal is to investigate the heterojunctions formed by the window layers produced in India with the CulnS2 absorber layers produced at NPAC both in substrate and superstrate configurations. The aim will be to produce pinhole free, conformal layers on the substrates. The window layers will be produced with transmittances(80% and with resistivities(10-1(cm on SnO2 coated glass and on CulnS2 layers supplied by NPAC. The layers deposited will be investigated using X-ray diffraction, EDAX, transmittance and reflectance versus wavelength measurements and using a range of other electro-optical measurements to determine the phases present, structure of each phase, energy bandgap, transport properties and trap levels present in the layers. The heterojunction interfaces will be investigated using I-V, C-V, C-f, spectral response and photo-capacitance measurements to determine the barrier height, density and distribution of traps and the potential of these junctions for producing efficient photovoltaic solar cell devices.
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