| EPSRC Reference: |
GR/N39586/01 |
| Title: |
ADSORPTION OF PHOSPHINES ON SI (001) |
| Principal Investigator: |
Srivastava, Professor G |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Overseas Travel Grants Pre-FEC |
| Starts: |
01 June 2000 |
Ends: |
30 November 2000 |
Value (£): |
1,000
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Summary on Grant Application Form |
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Superior quality n-type Si thin films are usually fabricated by adding phosphine gas in a controlled manner during the CVD growth by the pyrolysis of silane. Several experimental investigations, notably XPS, STM, TPD and IR studies have clearly indicated that the phosphine molecule (PH3) is adsorbed in a disscociated manner, with the presence of PH2 nad H on different Si dimer atoms on the Si (001) surface. This is however, no clear proof for this from any direct experimental investigation. On the other hand, to the best of our knowledge, there are no theoretical investigation of the PH3/Si (001) system. In this programme we plan to make ab-nitio calculations to determine the atomic geometry, electronic structure and vibrational modes of various plausible atomic site of dissociative adsorption of PH3 on Si(001). Our results should provide firm evidence of the lowest -energy adsorption configuration and thus strengthen some of the outcomes of recent experimental studies on this system.
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Key Findings |
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ex.ac.uk |