EPSRC Reference: |
GR/N32976/01 |
Title: |
FUTURE TECHNOLOGIES FOR THE ELECTRICAL ISOLATION OF III-V SEMICONDUCTOR DEVICES |
Principal Investigator: |
Seeds, Professor AJ |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic and Electrical Engineering |
Organisation: |
UCL |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 February 2001 |
Ends: |
31 January 2004 |
Value (£): |
89,931
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Processing |
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EPSRC Industrial Sector Classifications: |
Electronics |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
A systematic approach to III-V semiconductor electrical isolation via ion implantation is required by the Surrey Ion Beam Centre. We therefore propose a dedicated project investigating the physics and applications of implant isolation. Defect/dopant interaction will be studied through the correlation of point defect concentration and the electrical properties of implanted material. New methods for the efficient isolation of In-based and narrow band-gap materials will be developed on simple test structures. These methods will be applied and tested on real devices for which the need for a planar isolation process has been highlighted, and for which no process currently exists. The results will be summarised in a predictive PC program developed to provide recipes for isolation of devices varying in composition, doping type/concentration and depth.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
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