| EPSRC Reference: |
GR/N09862/01 |
| Title: |
PRECISION ION IMPLANTED SEMICONDUCTOR DEVICES |
| Principal Investigator: |
Kearney, Professor M |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Sch of Electronics & Physical Sciences |
| Organisation: |
University of Surrey |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
31 October 2000 |
Ends: |
30 October 2003 |
Value (£): |
235,839
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
Materials Characterisation |
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| EPSRC Industrial Sector Classifications: |
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| Related Grants: |
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| Panel History: |
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Summary on Grant Application Form |
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Ion implantation has developed a reputation for precision dosimetry for dopants into III-V semiconductors that exceeds (by a significant margin) the accuracy with which dopants can be incorporated by modern epitaxial techniques. Thie extra precision is the difference that will allow low-cost high-yield devices to be made by ion-implantation rather than epitaxy. This project has four parts: (i) to prove the precision dosimetry for III-V devices, to make (ii) a planer-doped-barrier and a (iii) hyperabrupt varactor by an all-implant process so as to achieve a prespecified I-V characteristic.The work will be undertaken in close cooperation with EEV Ltd, who will offer the exploitation route.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.surrey.ac.uk |