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Details of Grant 

EPSRC Reference: GR/M85678/01
Title: ASSESMENT OF INGAASN MATERIALS AND OPTOELECTRIC DEVICES
Principal Investigator: Adams, Professor A
Other Investigators:
Hosea, Dr TJC O'Reilly, Professor E Lancefield, Dr D
Researcher Co-Investigators:
Project Partners:
Philipps University of Marburg
Department: Sch of Electronics & Physical Sciences
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2000 Ends: 31 March 2003 Value (£): 228,478
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The III-V alloy InGaAsN shows quite remarkable band structure properties that raise exciting possibilities for optoelectronic applications. Although GaN has a much larger band gap than GaAs, when a low concentration of N is incorporated into GaAs there is a very strong decrease in the optical band gap. This is very interesting both theoretically and practically: theoretically, because the behaviour cannot be explained by standard models of III-V alloys and so new approaches are clearly needed; practically, because the lower band gap makes accessible in the GaAs system the 1.3um and 1.55um wavelengths of interest for optical fibre communications. If we can achieve a good theoretical understanding of the band structure and optical properties of InGaAsN, the possibility exists that we may be able to propose novel and superior optoelectronic device structures, (eg with mc*=mv*). To temperature dependences of I. The optical and electrical properties of InGaAsN/GaAs quantum wells and II. The gain and loss processes in laser diodes. The results will be used to refine our new theoretical model which then will be used to predict optimum laser structures.
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Organisation Website: http://www.surrey.ac.uk