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Details of Grant 

EPSRC Reference: GR/M69104/01
Title: MICROELECTROCHEMICAL SENSORS VIA SELF-ASSEMBLY AT SILICON
Principal Investigator: Horrocks, Dr BR
Other Investigators:
Houlton, Professor A
Researcher Co-Investigators:
Project Partners:
Department: School of Chemistry
Organisation: Newcastle University
Scheme: Standard Research (Pre-FEC)
Starts: 06 April 2000 Ends: 05 April 2003 Value (£): 133,493
EPSRC Research Topic Classifications:
Analytical Science
EPSRC Industrial Sector Classifications:
Chemicals Electronics
Pharmaceuticals and Biotechnology No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Miniaturisation is an important current research theme in analytical current research theme in analytical chemistry. Modern analytical research into sensor arrays and analysis-on-a-chip devices depends heavily on techniques of miniaturisation of various components. These efforts are aimed at producing faster, cheaper and more efficient and sensitive instrumentation. Electrochemical microelectrode arrays in particular gain significantly in terms of signal-to-noise over macroelectrodes due to the reduced capacitive currents. The fabrication of microelectrode arrays and especially individually addressable arrays of microelectrodes is currently time consuming and expensive. Our research aims to develop a generic method for the creation of electrochemical sensor arrays that is compatible with silicon microfabrication and micromachining. Our proposal is to modify directly the hydrogen-terminated surface formed after fluoride etching of silicon wafers to produce chemically modified microelectrodes and arrays. By avoiding the use of metals such as gold this offers several potential advantages: 1. The silicon surface is extremely well-defined and reproducable, 2. We can exploit the photoelectrochemical properties of the silicon to address individual microelectrodes with light and thus avoid encapsulation of high density metal connections and 3. We can achieve high binding site densities at porous silicon and increase the dynamic range and response of surface derivatised ISFETs.
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Organisation Website: http://www.ncl.ac.uk