| EPSRC Reference: |
GR/M67438/01 |
| Title: |
MBE GROWTH AND ASSESMENT OF GANAS - THE MISCIBILITY GAP, AS SURFACTANT EFFECTS AND CUBIC GAN LAYERS |
| Principal Investigator: |
Foxon, Professor CT |
| Other Investigators: |
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| Department: |
Sch of Physics & Astronomy |
| Organisation: |
University of Nottingham |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 January 2000 |
Ends: |
31 December 2001 |
Value (£): |
158,061
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
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Summary on Grant Application Form |
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The main aims of this project are to study the properties of GaNAs layers frown by molecular beam epitaxy, to develop a reliable MBE growth technology for cubic GaN and to invesitgate the feasibility of nitride based low-dimensional structures. To achieve this goad, we will investigate the temperature dependence of miscibility gap in the GaNAs system; we will study the influence of As on MBE growth kinetics and surface processes; we will investigate methods to improve the electrical and optical properties of GaN layers using isovalent As doping and develop reproducible methods for MBE growth of cubic GaN layers using arsenic as a surfactant.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.nottingham.ac.uk |