| EPSRC Reference: |
GR/M53523/01 |
| Title: |
POINT AND EXTENDED DEFECTS IN III-V NITRIDE SEMICONDUCTORS |
| Principal Investigator: |
Jones, Professor R |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 October 1999 |
Ends: |
31 January 2003 |
Value (£): |
125,004
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
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| EPSRC Industrial Sector Classifications: |
| Electronics |
No relevance to Underpinning Sectors |
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| Panel History: |
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Summary on Grant Application Form |
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This proposal seeks resources to carry out modelling studies on point and extended defects in GaN, AIN and InN, and to investigate their interaction. The modelling studies will use ab initio cluster and supercell methods developed over several years. The structure and properties of extended defects as well as their interaction with point defects, impurities and dopants will be explored. The role of oxygen in the yellow luminescence often detected in GaN grown on sapphire will also be investigated. The calculations will be directed to helping the UK community carrying out growth and characterisation studies of these nitrides.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ex.ac.uk |