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EPSRC Reference: GR/M46419/01
Title: NOISE STUDY NEAR THE METAL TO INSULATOR TRANSITION IN TWO-DIMENSIONAL SEMICONDUCTOR STRUCTURES
Principal Investigator: Savchenko, Professor A
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Exeter
Scheme: Standard Research (Pre-FEC)
Starts: 15 July 1999 Ends: 14 July 2002 Value (£): 212,033
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
An intriguing behaviour of resistance noise near the Metal to Insulator Transition (MIT) has been seen on thin films and not understood, so there is a need for new experiments on advanced two-dimensional systems where the degree of disorder is varied in a controlled way by changing the carrier concentration. This becomes even more important now, when a new type of the MIT in 2D, with a critical behaviour, has been unexpectedly observed on clean systems with heavy charge carriers. Its origin is unclear, although it is thought to be a result of a strong Coulomb interaction. We propose to perform a comparative study of noise in two-dimensional gases of holes and electrons in GaAs with very different manifestations of the MIT in conductance: with and without critical behaviour. With the help of noise measurements we want to test the suggestion that the insulating regime of p-GaAs is in fact a strongly correlated state - pinned Wigner crystal. In the insulating regime of n-GaAs, we are aimed at understanding the origin of 1/f noise in hopping-unresolved problem, with several theories suggested which we are going to examine by measuring the structures with different geometry.
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