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Details of Grant 

EPSRC Reference: GR/M12032/01
Title: POLYMER TFTS FOR VLSI NEURAL AND DISPLAY CIRCUITS
Principal Investigator: Eccleston, Professor W
Other Investigators:
Higgins, Professor S
Researcher Co-Investigators:
Project Partners:
Department: Electrical Engineering and Electronics
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 01 September 1998 Ends: 31 August 2001 Value (£): 172,625
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This project is concerned with the development of polymer semiconductor field effect transistors, FETs, which will exhibit improved switching speeds and current handling. Current polymer FETs are inverted TFTs, and are limited in performance by low carrier mobilities (up to 10-1 cm2/Vsec). We will develop new configurations for FETs which take advantage of short channels (equal here to the film thickness, down to 100 nm) which will demonstrate improved performance. Readily available polythiophenes will be used for the early devices. Mobilities are known to be enhanced for ordered molecular films, and the use of self-assembly will be explored to be used in later devices. High leakage currents will be prevented by the use of Schottky barriers; inactive capacitances will be reduced through the use of novel vertical structures on insulating substrates. The programme of device fabrication and assessment will be integrated with an extensive study of electrical and optical properties of the materials and devices. Such transistors will be important for a number of applications in large area electronics, such as active matrix displays, neural networks and sensor arrays.
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Organisation Website: http://www.liv.ac.uk