| EPSRC Reference: |
GR/M04952/01 |
| Title: |
THEORY OF ELASTICITY AND DIFFUSION IN STRAINED-LAYER SEMICONDUCTOR HETEROSTRUCTURES |
| Principal Investigator: |
Dunstan, Professor D |
| Other Investigators: |
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| Department: |
Physics |
| Organisation: |
Queen Mary University of London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 November 1998 |
Ends: |
31 October 2001 |
Value (£): |
134,150
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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Research on strained-layer semiconductors has revealed two areas where related theoretical effort is timely. While satisfactory equations of state exist for materials under hydrostatic pressure, no equation exists for general strain, such as exists in strained layer devices (lasers, etc). The relationship between non-linear elasticity and phonon frequencies under strain has not been developed, and such results as there are appear to be contradictory. One strand of the programme aims to resolve these problems, and to test results by comparison with molecular dynamics simulations.Some authors suggest that strain has a profound effect on the self-diffusion of materials, which if true would be a serious problem in the processing of strained semiconductor structures. With recent improvements in the measurement of diffusion, we find no effect of strain. However, interpretation of experimental data would be facilitated by a proper theoretical understanding of the parameters. Again, results in this area will be compared with molecular dynamics simulations.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
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| Description |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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