| EPSRC Reference: |
GR/M03030/01 |
| Title: |
FEGSEM/STM/CL STUDIES OF DEFECTS IN GAN |
| Principal Investigator: |
Cherns, Professor D |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Bristol |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 February 1998 |
Ends: |
30 September 2001 |
Value (£): |
195,870
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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We wish to modify an existing Coates and Walter FEGSEM fitted with an in-situ STM to include (a) an electronic backscattering pattern (EBSP) facility and (b) low temperature cathodoluminescence (CL). By developing a low voltage EBSP technique we intend to correlate high spatial resolution orientation mapping with CL to determine the type of boundaries and, perhaps, individual defects which control luminescence in GaN and InGaN/GaN films. We wish to carry out exploratory studies using low voltage SEM and the in-situ STM to examine the electronic properties of individual defects in GaN.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.bris.ac.uk |