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Details of Grant 

EPSRC Reference: GR/L95113/01
Title: DIODE-ARRAY PUMPED SEMICONDUCTOR SLAB LASERS FOR HIGH POWER AND BRIGHTNESS
Principal Investigator: Penty, Professor R
Other Investigators:
White, Professor I
Researcher Co-Investigators:
Project Partners:
Department: Electrical and Electronic Engineering
Organisation: University of Bristol
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 1998 Ends: 30 April 2001 Value (£): 42,257
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
We propose to pump a semiconductor slab laser optically using a high power diode bar in order to realise a multiwatt diffraction-limited semiconductor source. Optically-pumped semiconductor lasers have particular advantages for power scaling; the vertical size of the laser mode is not restricted to the dimensions of a p-n junction, and with no requirement for doping, free carrier absorption loss is reduced allowing an increase of the active volume of the device. In this programme we will design and developa laser in which the gain region is a multiquantum well structure supporting a zig-zag totally-internally reflected mode with a large beam diameter (-200 microns) to relax the power constraint imposed by optical damage. This structure is pumped along the growth direction by the collimated beam from a diode bar laser. The programme joins complementary skills from two institutions; Southampton has expertise in the use of collimated diode bar output for laser pumping, resonator design, and planar optical geometries and Bristol contributes extensive knowledge of gain and lasing behaviour in semiconductor structures, including VCSELS which have features germane to the proposed device. Semiconductor structures will be grown at Sheffield and at Imperial College and fabricated at Bristol and Southampton.
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Organisation Website: http://www.bris.ac.uk