| EPSRC Reference: |
GR/L73050/01 |
| Title: |
ROPA: HIGH DENSITY GAAS- AND INP-BASED PHOTODETECTORS FOR 2-4UM |
| Principal Investigator: |
Haywood, Professor S |
| Other Investigators: |
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| Department: |
Engineering |
| Organisation: |
University of Hull |
| Scheme: |
ROPA |
| Starts: |
01 January 1998 |
Ends: |
30 June 1999 |
Value (£): |
52,530
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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A novel IR photodetector is proposed for the 2-4 mm region based on GaAs and InP substrates. It uses inter-subband transitions in an asymmetric quantum well which has thin, high barriers and thicker, lower outer barriers. The relevant transition is from a bound state in the deepest part of the well to a resonant state confined only by the high barriers. Well assymmetry allows normal incidence absorption for some device designs while the high barriers keep the dark current extremely low. This should provide detectivities >> 1011cmHz1/2W-1, while the resonant upper state ensures photo-excited carriers can escape the wells giving good responsivity.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.hull.ac.uk |