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Details of Grant 

EPSRC Reference: GR/L38066/01
Title: BLUE/UV LASERS BASED ON NITRIDE SEMICONDUCTORS
Principal Investigator: Blood, Professor P
Other Investigators:
Somerford, Dr D
Researcher Co-Investigators:
Project Partners:
Sharp Laboratories of Europe Ltd
Department: School of Physics and Astronomy
Organisation: Cardiff University
Scheme: Standard Research (Pre-FEC)
Starts: 01 September 1997 Ends: 31 August 2000 Value (£): 72,452
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The ultimate objective of the research is to demonstrate a well characterised short wavelength blue laser operating CW at room temperature. The devices will be grown by molecular beam epitaxy and based on the (AlGaIn)N materials system. In order to achieve this aim, it will be necessary to develop techniques for growing and characterising high quality (InGa)N/GaN quantum well structures which emit radiation in the appropriate wavelength range to incorporate them in a suitable p-i-n diode structure. To this end, we shall study both n and p-type doping of (AlGaIn)N which will be used as cladding material in order to develop low-resistivity films. The p-doping will be achieved with Mg or (preferable) with C which we believe may have significantly smaller acceptor ionisation energy than Mg. The n type doping is expected to be relatively routine, using Si. Structures will be grown by plasma-enhanced MBE at Nottingham, quantum wells will be characterised using PL and excitation spectroscopy at UMIST, lasers will be made at Nottingham, characterised at Nottingham (routinely) and at Cardiff using their more advanced techniques. The intended device structure will be a reactive ion etched mesa, forming a ridge waveguide.
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Organisation Website: http://www.cf.ac.uk