| EPSRC Reference: |
GR/L34457/01 |
| Title: |
DOPANT ENGINEERING: CARBON IN III-V MATERIALS |
| Principal Investigator: |
Jones, Professor R |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
12 May 1997 |
Ends: |
11 May 2000 |
Value (£): |
138,048
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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| EPSRC Industrial Sector Classifications: |
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Summary on Grant Application Form |
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This proposal seeks resources to carry out modelling studies of the donor/acceptor activity of carbon in 16 III-V semiconductors. A key aim is (a) to determine the materials for which the C acceptor and donor roles are optimum, and (b) to investigate alloys of these elements with GaAs to provide input to the IRC at Imperial and the growth centre at Liverpool. (c)To investigate the tendency for the formation of compensating centres such as di-carbon and acceptor-vacancy pairs.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ex.ac.uk |