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Details of Grant 

EPSRC Reference: GR/L14756/01
Title: THERMOPHOTOVOLTAIC DEVICES IN METAMORPHIC INGAAS/GAAS
Principal Investigator: Kidd, Dr P
Other Investigators:
Dunstan, Professor D
Researcher Co-Investigators:
Project Partners:
Teledyne UK Ltd
Department: Physics
Organisation: Queen Mary University of London
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1996 Ends: 30 September 1998 Value (£): 93,410
EPSRC Research Topic Classifications:
Materials Processing Optoelect. Devices & Circuits
Solar Technology
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The principle of thermophotovoltaic [tvp] electricity generation is to convert infra-red radiation from an incandescent emitter into DC electricity using a suitable photovoltaic device. Recent progress has been based on GaSb and on InGaAs/InP; both are expensive because of the high substrate cost. We propose to make InGaAs TPV cells based on relaxed layers of InGaAs grown on GaAs. The tehnology is difficult as tight criteria have to be met on the quality and morphology of the relaxing layers. Surrey have been partners in an ESPRIT consortium which has just promulgated design rules to meet the criteria. This project will test these rules in a rea device context. He project will be carried out by teams from Oxford, Northumbria and Surrey Universities. We aim at devices at three bandgaps fro operation with black-body emission and with thermoluminescence which concentrates the power in a narrow wavelength range. Oxford will grow test layers, relaxed buffer structures and finally structures complete with TPV pn diodes on top. Surray will design and assess the structures, and Northumbria will fabricate devices and characterise them. EEV Ltd will be closely interested in the programme and will guild it towards achieving a device with real potential for commercial manufacture.
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