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Details of Grant 

EPSRC Reference: GR/K90081/01
Title: AN INTERGRATED APPROACH TO NANOSCALE FABRICATION
Principal Investigator: Jones, Dr G
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Toshiba
Department: Physics
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 07 February 1997 Ends: 06 February 2000 Value (£): 121,581
EPSRC Research Topic Classifications:
Materials Processing
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The aim of this proposal is to combine together a set of fabrication processes which will yield a true nanoscale fabrication technology. The proposal is centred particularly within the field of semiconductors but has potential in generating nanoartefacts for other non-electronic applications. Since the only real tools which can manipulate material truly at the atomic scale, in both lateral dimensions and with total flexibility are based on scanning probes, this proposal will utilise an STM. However scanning probe techniques are severely limited in terms of real coverage and throughput and thus are not suitable as stand alone techniques. Here we wish to integrate the STM with MBE growth, focused ion implantation and radical ion etching in a mix and match process, where only the very small, critical areas are exposed by the STM, whilst the remaining features are defined using focused ion beams or selective growth techniques. The method will utilise the selective oxidation of hydrogenated surfaces to form a mask against selective etching using in situ radical C12/H2 ion etching.
Key Findings
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Summary
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Further Information:  
Organisation Website: http://www.cam.ac.uk