EPSRC Reference: |
GR/K84615/01 |
Title: |
PLASMA MODELLING FOR LOW DAMAGE ETCHING APPLICATIONS IN III_V DEVICE STRUCTURES |
Principal Investigator: |
Sullivan, Professor JL |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic Engineering |
Organisation: |
Aston University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 September 1996 |
Ends: |
31 May 1997 |
Value (£): |
31,577
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EPSRC Research Topic Classifications: |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
This proposed programme is meant to support a larger EPSRC funded programme studying plasma damage in II-V device structures. The externally controllable quantities affecting both etch rates and plasma damage are: power input, gas pressure, gas flow and threshold flow rates and relative concentrations. Experiments are being conducted on radio frequency and microwave plasmas to monitor the effect of independently changing these controllable parameters on etch rates, surface topography and surface damage. In parallel with this internal plasma parameters such as ion, neutral and electron densities and energies, together with the plasma and surface potentials are being monitored by means of a Hiden compensated electrostatic (Langmuir) probe and a Hiden HAL EQP 300 energy resolved mass spectrometric plasma probe both of which are fitted to the plasma cell. Using the basic plasma parameters gained from probe measurements and the results of the extensive surface characterisation, theoretical models will be developed in this proposed programme to determine the fundamental processes occurring within the plasmas and relate these to the surface changes observed in the device structures.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.aston.ac.uk |