Details of Grant 

EPSRC Reference:	GR/K82871/01
Title:	OXIDATION OF SIGE FOR DEVICE APPLICATION.
Principal Investigator:	Hall, Professor S
Other Investigators:	Eccleston, Professor W
Researcher Co-Investigators:
Project Partners:	Imperial College London
Department:	Electrical Engineering and Electronics
Organisation:	University of Liverpool
Scheme:	Standard Research (Pre-FEC)
Starts:	01 February 1996	Ends:	31 July 1999	Value (£):	191,017
EPSRC Research Topic Classifications:	Materials Processing
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:
Summary on Grant Application Form
The work involves the growth of oxides using the low-temperature plasma anodisation technique; optimisation of the growth and subsequent annealing conditions to achieve a high integrity oxide on SiGe for use in the development of SiGe technology. Detailed electrical characterisation of the oxides will be effected from MOS capacitors using capacitance voltage, and current-voltage techniques including voltage stressing for interface assessment; avalanche electron injection and photo IV for bulk trap measurement. Scanning Auger Spectroscopy will be used to determine the Ge distribution throughout the oxide and correlated with the electrical measurements. Subsequently, SiGe surface channel mobility and passivation of interfaces will be investigated using MOSFET, bipolar transistor and gated diode measurements.
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Organisation Website:	http://www.liv.ac.uk