| EPSRC Reference: |
GR/K41427/01 |
| Title: |
MULTILAYER DOPING AND CONTACTING OF ZNSE:N |
| Principal Investigator: |
Prior, Dr KA |
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| Department: |
Physics |
| Organisation: |
Heriot-Watt University |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
23 October 1994 |
Ends: |
22 October 1995 |
Value (£): |
34,945
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Summary on Grant Application Form |
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The demonstration of a room temperature CW II-VI diode laser by Sony is an exciting and important step towards practical visible semiconductor lasers but the current laser lifetime of ~5 seconds shows that there are still major problems which need to be solved. Laser performance is limited by three major factors, namely control of lattice matching, p-doping of the waveguide and cladding layers and contacting to the p-layer. The purpose of this application is to support Dr Zhu, of Hiroshima University, Japan, for one year to take advantage of his outstanding background in II-VI MBE to address the related problems of p-doping and contacting to ZnSe and related alloys.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.hw.ac.uk |