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Details of Grant 

EPSRC Reference: GR/K14490/01
Title: PHOTO-ASSISTED NITROGEN DOPING OF II-VI SEMICONDUCTORS
Principal Investigator: Irvine, Professor SJC
Other Investigators:
Researcher Co-Investigators:
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Department: Multidisciplinary Research Centre
Organisation: Glyndwr University
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 1995 Ends: 31 January 1997 Value (£): 80,548
EPSRC Research Topic Classifications:
Materials Processing
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Summary on Grant Application Form
The application of photo-assisted MOVPE to the problem of p-type doping in II-VI semiconductors offers the opportunity for major advancements in the fabrication of II-VI detectors and emitters. Nitrogen doping from organo-amines will be systematically studied to understand the correct combination of amine precursor, thermodynamic and kinetic conditions during growth and illumination wavelength to obtain efficient substitutional doping, free of associated deep levels. A range of organo-amines will be characterised for their decomposition characteristics using an in situ mass spectrometer sampling system. Different degrees of organic substitution will be of particular interest in order to determine the sources of hydrogen passivation. The growth kinetics will be studied using in situ reflectometry and ellipsometry and the results modelled to determine the role of photo-simulation. Both primary photoabsorption, using ultraviolet radiation, and secondary via surface change transfer will be investigated to discover the critical growth mechanism. The combination of in situ characterisation and tailoring the organo-amine precursor, will give an excellent opportunity for success in this technologically critical area. The more favourable doping schemes will be used to grow p/n diode structures of both narrow and wide bandgap devices and their characteristics will be measured to test the suitability of nitrogen doping by photo-assisted MOVPE.
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