EPSRC Reference: |
GR/K10805/01 |
Title: |
THEORETICAL INVESTIGATION OF ADVANCED STRAINED-LAYER BANDSTRUCTURE ENGINEERING FOR OPTICAL MODULATORS |
Principal Investigator: |
Adams, Professor A |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
University of Surrey |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 June 1995 |
Ends: |
31 May 1997 |
Value (£): |
73,484
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EPSRC Research Topic Classifications: |
Optoelect. Devices & Circuits |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
Semiconductor devices consisting of multi-strain step-like quantum wells herald a new era in bandstructure engineering for optoelectronics. These quantum wells can contain a range of different materials, both strained and unstrained. These can cause a significant modification of the valence band structure in a quite unique way compared to conventional single strain or unstrained quantum well layers. We will study theoretically the implication of this technology and apply it to advanced strained quantum well systems for electro-absorption (EA) modulators based on the Quantum Confined Stark Effect (QCSE). These structures will be modelled theoretically using the strained InGaAsP system grown on InP. Many different multi-strain step structures will be analysed and their main characteristics identified. This will lead to conclusions on the usefulness to improve the existing performance of EA modulators and lead to optimised structures.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.surrey.ac.uk |