EPSRC Reference: |
GR/J70970/01 |
Title: |
ASSESSMENT OF PLASMA DAMAGE IN III-V SEMICONDUCTOR DEVICE STRUCTURES |
Principal Investigator: |
Cardwell, Professor M |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Electronic Engineering |
Organisation: |
Aston University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 January 1995 |
Ends: |
30 September 1998 |
Value (£): |
270,314
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EPSRC Research Topic Classifications: |
Electronic Devices & Subsys. |
RF & Microwave Technology |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The prospect describes a work programme to investigate the effects of plasma etching under a variety of conditions on the residual surface quality in several GaAs microwave device structures. The reduction in device performance following plasma etching is well known and prevents the establishment of completely dry processes. Quantitative information on surface damage has not been obtained before, with past studies relying on the analysis of the performance of completed devices which is expensive, time-consuming and does not tackle the problem directly. The use of several analytical techniques, in one system, will be combined to study the etched surfaces in different device configuration produced under differing plasma conditions. In addition new reactants will be studied in order to replace the CFCs used in current industrial processes.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.aston.ac.uk |