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Details of Grant 

EPSRC Reference: GR/J70970/01
Title: ASSESSMENT OF PLASMA DAMAGE IN III-V SEMICONDUCTOR DEVICE STRUCTURES
Principal Investigator: Cardwell, Professor M
Other Investigators:
Sullivan, Professor JL
Researcher Co-Investigators:
Project Partners:
GEC
Department: Electronic Engineering
Organisation: Aston University
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 1995 Ends: 30 September 1998 Value (£): 270,314
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. RF & Microwave Technology
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The prospect describes a work programme to investigate the effects of plasma etching under a variety of conditions on the residual surface quality in several GaAs microwave device structures. The reduction in device performance following plasma etching is well known and prevents the establishment of completely dry processes. Quantitative information on surface damage has not been obtained before, with past studies relying on the analysis of the performance of completed devices which is expensive, time-consuming and does not tackle the problem directly. The use of several analytical techniques, in one system, will be combined to study the etched surfaces in different device configuration produced under differing plasma conditions. In addition new reactants will be studied in order to replace the CFCs used in current industrial processes.
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Organisation Website: http://www.aston.ac.uk