Details of Grant 

EPSRC Reference:	GR/J52556/01
Title:	COORDINATED X-RAY AND TEM STUDY OF STRAIN RELAXATION IN <111> ORIENTED PIEZOELECTRIC IN GAAS/GAAS EPILAYERS
Principal Investigator:	Kidd, Dr P
Other Investigators:	Dunstan, Professor D
Researcher Co-Investigators:
Project Partners:
Department:	Materials Science & Engineering
Organisation:	University of Surrey
Scheme:	Standard Research (Pre-FEC)
Starts:	01 April 1994	Ends:	31 March 1996	Value (£):	21,480
EPSRC Research Topic Classifications:	Materials Characterisation
EPSRC Industrial Sector Classifications:
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Panel History:
Summary on Grant Application Form
The techniques of x-section TEM, x-ray diffraction and optical and electrical assessment will be combined to investigate the mechanisms of strain relaxation in InGaAs layers grown by pseudomorphic, mismatched epitaxy on the III B face of GaAs. RHEED will be used to investigate the regime of good 2D growth and the study will establish the limits of strain and strained layer thickness for structural integrity and stability. Our studies will complement those on 001 oriented layers where we expect mechanisms of dislocation generation and motion to differ. They will also underpin parallel studies on strain lll structures which exploit the associated piezoelectric fields in optoelectronic devices with novel and improved performance.
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Organisation Website:	http://www.surrey.ac.uk