| EPSRC Reference: |
GR/J47750/01 |
| Title: |
VUV OXIDATION OF SI AND SIGE STRUCTURES |
| Principal Investigator: |
Boyd, Professor I |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Electronic and Electrical Engineering |
| Organisation: |
UCL |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 March 1994 |
Ends: |
31 October 1997 |
Value (£): |
220,768
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
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Summary on Grant Application Form |
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Low thermal budget, and especially low temperature grown films are key components in advanced technologies such as VLSI, optoelectronics, sensors and mass memories. There are also remarkable opportunities for fundamental chemical reaction studies offered by improved control over thermally-agitated kinetics, as well as genuinely new kinetic processes. The aims of this project are to establish a new expertise in low temperature vacuum UV oxiation reactions (ie <200nm) on Si and Si-Ge strained layers. A facility for VUV growth of thin oxides using a range of excimer sources will be developed and the film properties characterised using FTIR, ellipsometry, etch-rate, etc, and electrical properties such as breakdown, wearout, trapping etc, using CV, IV and GW. We expect ultimately to make simple device-like structures incorporating some of the optimised layers produced within the programme.
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Key Findings |
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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