Details of Grant 

EPSRC Reference:	GR/J15728/01
Title:	MONOLITHIC MILLIMETRE-WAVE INTEGRATED CIRCUITS AT 94 GHZ AND 140 GHZ
Principal Investigator:	Taylor, Mr M
Other Investigators:	Beaumont, Professor S Beaumont, Professor S
Researcher Co-Investigators:
Project Partners:
Department:	Electronics and Electrical Engineering
Organisation:	University of Glasgow
Scheme:	Standard Research (Pre-FEC)
Starts:	01 October 1993	Ends:	31 March 1997	Value (£):	331,770
EPSRC Research Topic Classifications:	RF & Microwave Technology
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
This is a collaborative project between the Universities of Glasgow, Cambridge, Leeds and Kent whose goals of the project are: to develop technologies and design tools for analogue integrated circuits operating at frequencies of 94GHz and 140GHz: to establish characterisation techniques for circuits and devices operating at these frequencies: and to underpin this work with physical understanding of the behaviour of key passive and active devices.Within this programme Glasgows objectives are: to transfer 94GHz device technology developed under its Rolling Grant (GR/J90718) within the consortium: to develop models for coplanar waveguide elements validated at 94GHz and where possible at 140GHz using empirical and physical modelling techniques: to deploy device technology for use at 140GHz, again exploiting Rolling Grant developments: and to fabricate an integrated 140GHz low-noise amplifier and mixer as a technology and design tool demonstrator.Progress:94GHz circuits will be based on pseudomorphic HEMTs on GaAs substrates.The emphasis is on the development of manufacturable devices and circuits, where reproducibility and yield are of the essence. Since gate recessing is one of the least reproducible steps in HEMT fabrication, layer structures suitable for dry etch recessing have been developed offering high gain and good control of short channel effects in 0.1=s5m gate length devices. Prototype 2- and 4-gate finger transistors have been fabricated and tested to 110GHz by on-wafer probing in collaboration with Leeds University. 4-finger 0.2=B5m gate length devices exhibit good uniformity and 5dB power gain at 94GHz. For 140GHz circuits, InP-based transistors will be employed. Prototype devices on this material system have also been tested to W-band and good agreement has been obtained with equivalent circuits extracted from measurements up to 60GHz. =46ull wafers of coplanar waveguide elements have been fabricated and characterised to 60GHz at Glasgow and to 110GHz at Leeds. Extremely good agreement has been obtained between forecasts extrapolated from equivalent circuits extracted from 60GHz measurements, and the W-band data. This gives a high degree of confidence in the extrapolation of validated models to 140GHz, where direct measurements at not likely to be available until late into the project. Physical modelling of simple CPW discontinuities using commercially-available software also gives good agreement with measurements.
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Organisation Website:	http://www.gla.ac.uk