| EPSRC Reference: |
GR/J10761/01 |
| Title: |
LOW TEMPERATURE SPECTROMETER TO EXTEND THE RANGE OF PHOTOLUMINESCENCE SPECTROSCOPY APPLIED TO SEMICONDUCTORS |
| Principal Investigator: |
Lightowlers, Professor E |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
Kings College London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 September 1993 |
Ends: |
31 May 1996 |
Value (£): |
136,506
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Optoelect. Devices & Circuits |
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| EPSRC Industrial Sector Classifications: |
| Aerospace, Defence and Marine |
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| Panel History: |
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Summary on Grant Application Form |
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The design and construction of a Fourier transform spectrometer which will operate at 90K to allow high sensitivity high resolution photoluminescence spectroscopy to be extended to 5.5, -m without interference from room temperature background radiation. This will be used to make initial investigations of deep levels in Si, Ge and SiGe alloys and heterostructures, free and bound exciton luminescence from InSb, and luminescence from other narrow band gap III V semiconductors, alloys and heterostructures.Progress: This instrument has been designed except for a few minor components which can be more easily designed after an initial assembly. Standard and manufacturer-modified components have been, or shortly will be, delivered, e.g. vacuum and cryogenic components, detector, special mirrors, air bearing, beam splitter, control electronics and software. The major vacuum and cryogenic components designed here have been externally manufactured and very recently delivered. Other components have been, or shortly will be, constructed in our own workshop. If there are no major problems with any of the large range of components necessary for the construction of this instrument, it should be working within the next six months. Then, initial measurements will be carried out on Si, Ge and SiGe alloys and heterostructures to investigate deep level luminescence systems either already detected or anticipated. Some initial measurements will also be carried out on narrow band gap III V semiconductors, with particular emphasis on InSb. This initial work should form the basis for future research programmes for which funding will be requested.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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