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EPSRC Reference: GR/H98199/01
Title: SILICON-GERMANIUM MBE STRAINED-LAYER STRUCTURES STUDIED USING NANOSECOND PHONON PULSES
Principal Investigator: Wigmore, Professor JK
Other Investigators:
Researcher Co-Investigators:
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Pre Nexus Migration
Department: Physics
Organisation: Lancaster University
Scheme: Standard Research (Pre-FEC)
Starts: 16 November 1993 Ends: 15 November 1996 Value (£): 24,886
EPSRC Research Topic Classifications:
Materials Characterisation
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Summary on Grant Application Form
We propose to use nanosecond phonon pulse technique to study Si-Ge MBE pseudomorphic structures. Such techniques have previously been successfully applied to the characterisation of interface defects in silicon, sapphire and GaAs wafers, and also to the detailed study of the electron- phonon interaction in GaAs/AlGaAs heterostructures, in Si MOSFETs. We believe they could lead to significant advances also in the relatively under-developed field of Si/Ga MBE structures. First, the growth conditions could be characterised using phonon pulses as a non-destrictive probe of the defect state of the layers. This is accomplished by observing the diffusive scattering of heat pulses from the strained layer structures. Second, unique details of the electron-phonon interaction of carriers in devices based on these structures could be inferred by observing directly the phonons emitted and absorbed by the carriers. We wish to carry out this work as a collaboration with Prof T Miyasato at Kyushu Institute of Technology, Japan. The samples will be both grown by MBE and fabricated photolitho- graphically at Kyushu, and in addition 18 man-months of visits to Lancaster to carry out experiments, will be funded by a MONBUSHO grant in Japan. The project has been guaranteed travel support from the British Council, Tokyo.
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Organisation Website: http://www.lancs.ac.uk