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EPSRC Reference: GR/H97666/01
Title: INVESTIGATION OF LIGHT EMISSION FROM SILICON AND GERMINATION NANOSTRUCTURES
Principal Investigator: Bayliss, Professor S
Other Investigators:
Davis, Professor E
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Loughborough University
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1993 Ends: 30 September 1994 Value (£): 119,022
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
The project aims to determine whether it would be possible to produce Si or Ge full colour electro-luminescent addressable displays at room temperature. This involves a detailed investigation of the mechanisms of Si/Ge confinement luminescence. Nanostructures of Si and Ge will be grown by (1) in-situ uhv co-evaporation with SiO2 (:N/Ar/H) in a VG ESCA3; (ii) rf sputtering from Si/Ge targets in O/N/Ar/H plasma; (iii) dc unbalanced magnetron sputtering from Si/Ge in O/N/AR/H. The samples will be characterised for composition and structure by XPS, TEM, IR at LUT; esr, pds and Raman at UL, and EXAFS & SAX at the SRS. Optical bandgaps and reflectance in vis/uv will be measured at LUT and in the vuv at the SRS, to study the effect of confinement. Time and energy resolved photoluminiscence will be studied at LUT with tunable vis/uv excitation, and at the SRS with tunable vuv excitation. Information on electroluminescence (EL) will be obtained by sputtering ITO contacts onto the samples in-situ. Transient photoconductivity (TPC) will also be measured and used to produce a defect DOS. The effects of hydrogenation and dangling bands are expected to be crucial in the efficiency of PL, TPC and EL. Finally, any degradation of PL and EL on ageing by (V)uv irradiation will be studied to determine whether it is possible to provide a stable nanostructured material.
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Organisation Website: http://www.lboro.ac.uk