Details of Grant 

EPSRC Reference:	GR/H91787/01
Title:	HOT ELECTRON LIGHT EMISSION AND LASING IN SEMICONDUCTOR HETEROSTRUCTURES
Principal Investigator:	Balkan, Professor N
Other Investigators:	Ridley, Professor BK
Researcher Co-Investigators:
Project Partners:
Department:	Physics
Organisation:	University of Essex
Scheme:	Standard Research (Pre-FEC)
Starts:	01 February 1993	Ends:	31 July 1995	Value (£):	80,695
EPSRC Research Topic Classifications:	Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:
Summary on Grant Application Form
A new light emitting device utilising hot carrier parallel transport in GaAs/GaAlAs multiple quantum wells is proposed. The research programme is envisaged to evaluate the operation principles of and the associated hot carrier dynamics in the device. The electrical and the otpical device characterisation will be carried out by employing magnetotransport and photoluminescence measurements. The performance of the devices will then be determined as a function of sample parameters, applied field, lattice temperature and contact configuration. Internal quantum efficiency and the spatial uniformity of the emitted light will also be studied. We also intend to parallel the experimental work with a detailed modelling of the devices and the hot carrier processes involved in the operation.
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Organisation Website:	http://www.sx.ac.uk