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Details of Grant 

EPSRC Reference: GR/A11038/02
Title: STRUCTURAL, OPTICAL AND ELECTRICAL CHARACTERISATION OF DEFFECT EVOLUTION IN ION-IMPLANTED SILICON
Principal Investigator: Vernon-Parry, Dr KD
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Materials Research Institute
Organisation: Sheffield Hallam University
Scheme: Advanced Fellowship (Pre-FEC)
Starts: 01 May 2004 Ends: 30 September 2006 Value (£): 139,738
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The aim of this work is to correlate structural, electrical and optical properties of ion-implanted silicon, as functions of annealing schedules and impurity concentrations, combining techniques I have developed or used in previous research contracts. A large part of the work will be to develop Electron Backscattered Diffraction (EBSD) pattern quality analysis as a non-destructive method of quantifying ion implantation damage and the evolution of interstitial clusters. This will be, to my knowledge, the first quantitative application of EBSD to this problem. High resolution (Laplace) Deep Level Transient Spectroscopy and photoluminescence will also be used to study the evolution of defects in ion-implanted silicon, implanted with a range of heavy and light ions. Cathodoluminescence will be developed in collaboration with Professor Davies's group at King's College, London, and used to follow the evolution of defects during annealing of ionimplanted silicon. The project will lead to an increased knowledge of aggregation of intrinsic defects into clusters, their quantification, and their detailed electronic properties.
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Organisation Website: http://www.shu.ac.uk